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| SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION *With TO-220C package *DARLINGTON *High DC current gain *Low collector saturation voltage *Complement to type TIP105/106/107 APPLICATIONS *For industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP100/101/102 ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP100 VCBO Collector-base voltage TIP101 TIP102 TIP100 VCEO Collector-emitter voltage TIP101 TIP102 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 8 15 1 80 2 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP100 VCEO(SUS) Collector-emitter sustaining voltage TIP101 TIP102 VCE(sat)-1 VCE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage TIP100 ICBO Collector cut-off current TIP101 TIP102 TIP100 ICEO Collector cut-off current TIP101 TIP102 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance IC=3A ,IB=6mA IC=8A ,IB=80mA IC=8A ; VCE=4V VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=3A ; VCE=4V IC=8A ; VCE=4V IE=0 ; VCB=10V,f=0.1MHz IC=30mA, IB=0 CONDITIONS SYMBOL TIP100/101/102 MIN 60 80 100 TYP. MAX UNIT V 2.0 2.5 2.8 V V V 50 A 50 A 2 1000 200 200 20000 mA pF 2 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE TIP100/101/102 Fig.2 Outline dimensions (unindicated tolerance:0.1mm) 3 |
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